Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique
Identifieur interne : 000653 ( Chine/Analysis ); précédent : 000652; suivant : 000654Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique
Auteurs : RBID : Pascal:11-0174558Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
This indium-doped zinc oxide field effect transistor (IZO-FET) with a large ultraviolet (UV) detection sensitivity has been fabricated by inkjet printing technique. In darkness, the IZO-FETs exhibit a saturation current level of about 10 μA, an incremental mobility as high as 8 cm2 V-1 s-1, and a current on/off ratio of 104-105. When illuminated by 363nm, 1.7 mW cm-2 UV light, the IZO-FET displays a photocurrent of 2 mA, and a darkness current of ˜20 nA at an optimized gate voltage of -2 V. The device is effectively turned on in about 5 ms and off in 10 ms. These results suggest that the IZO-FET fabricated by inkjet printing could be a low cost highly sensitive UV photodetector.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 003341
- to stream Main, to step Repository: 002183
- to stream Chine, to step Extraction: 000653
Links to Exploration step
Pascal:11-0174558Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique</title><author><name>YAN WU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Royal Institute of Technology</s1><s2>Stockholm 100 44</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>Stockholm 100 44</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Faculty of Materials Science and Chemistry Engineering, China University of Geosciences</s1><s2>Wuhan</s2><s3>CHN</s3><sZ>1 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Wuhan</wicri:noRegion></affiliation></author><author><name sortKey="Girgis, Emad" uniqKey="Girgis E">Emad Girgis</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Advanced Materials and Nanotechnology Group, Department of Solid State Physics, National Research Centre</s1><s2>Cairo</s2><s3>EGY</s3><sZ>2 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Cairo</wicri:noRegion></affiliation></author><author><name sortKey="Strom, Valter" uniqKey="Strom V">Valter Ström</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Royal Institute of Technology</s1><s2>Stockholm 100 44</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>Stockholm 100 44</wicri:noRegion></affiliation></author><author><name sortKey="Voit, Wolfgang" uniqKey="Voit W">Wolfgang Voit</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Royal Institute of Technology</s1><s2>Stockholm 100 44</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>Stockholm 100 44</wicri:noRegion></affiliation></author><author><name sortKey="Belova, Lyubov" uniqKey="Belova L">Lyubov Belova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Royal Institute of Technology</s1><s2>Stockholm 100 44</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>Stockholm 100 44</wicri:noRegion></affiliation></author><author><name sortKey="Rao, K V" uniqKey="Rao K">K. V. Rao</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Royal Institute of Technology</s1><s2>Stockholm 100 44</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>Stockholm 100 44</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0174558</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0174558 INIST</idno><idno type="RBID">Pascal:11-0174558</idno><idno type="wicri:Area/Main/Corpus">003341</idno><idno type="wicri:Area/Main/Repository">002183</idno><idno type="wicri:Area/Chine/Extraction">000653</idno></publicationStmt><seriesStmt><idno type="ISSN">1862-6300</idno><title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title><title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cost lowering</term><term>Doped materials</term><term>Field effect transistor</term><term>Gate voltage</term><term>Indium addition</term><term>Indium oxide</term><term>Ink jet printing</term><term>Optimization</term><term>Photoelectric current</term><term>Thin film transistor</term><term>Ultraviolet detector</term><term>Ultraviolet radiation</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Rayonnement UV</term><term>Transistor couche mince</term><term>Transistor effet champ</term><term>Addition indium</term><term>Impression à jet d'encre</term><term>Courant photoélectrique</term><term>Optimisation</term><term>Tension de grille</term><term>Diminution coût</term><term>Détecteur UV</term><term>Matériau dopé</term><term>Oxyde de zinc</term><term>Oxyde d'indium</term><term>0707D</term><term>ZnO</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This indium-doped zinc oxide field effect transistor (IZO-FET) with a large ultraviolet (UV) detection sensitivity has been fabricated by inkjet printing technique. In darkness, the IZO-FETs exhibit a saturation current level of about 10 μA, an incremental mobility as high as 8 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, and a current on/off ratio of 10<sup>4</sup>-10<sup>5</sup>. When illuminated by 363nm, 1.7 mW cm<sup>-2</sup> UV light, the IZO-FET displays a photocurrent of 2 mA, and a darkness current of ˜20 nA at an optimized gate voltage of -2 V. The device is effectively turned on in about 5 ms and off in 10 ms. These results suggest that the IZO-FET fabricated by inkjet printing could be a low cost highly sensitive UV photodetector.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1862-6300</s0></fA01><fA03 i2="1"><s0>Phys. status solidi, A Appl. mater. sci. : (Print)</s0></fA03><fA05><s2>208</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique</s1></fA08><fA11 i1="01" i2="1"><s1>YAN WU</s1></fA11><fA11 i1="02" i2="1"><s1>GIRGIS (Emad)</s1></fA11><fA11 i1="03" i2="1"><s1>STRÖM (Valter)</s1></fA11><fA11 i1="04" i2="1"><s1>VOIT (Wolfgang)</s1></fA11><fA11 i1="05" i2="1"><s1>BELOVA (Lyubov)</s1></fA11><fA11 i1="06" i2="1"><s1>RAO (K. V.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science, Royal Institute of Technology</s1><s2>Stockholm 100 44</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Faculty of Materials Science and Chemistry Engineering, China University of Geosciences</s1><s2>Wuhan</s2><s3>CHN</s3><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>Advanced Materials and Nanotechnology Group, Department of Solid State Physics, National Research Centre</s1><s2>Cairo</s2><s3>EGY</s3><sZ>2 aut.</sZ></fA14><fA20><s1>206-209</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183A</s2><s5>354000193575820330</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0174558</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. A, Applications and materials science : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>This indium-doped zinc oxide field effect transistor (IZO-FET) with a large ultraviolet (UV) detection sensitivity has been fabricated by inkjet printing technique. In darkness, the IZO-FETs exhibit a saturation current level of about 10 μA, an incremental mobility as high as 8 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, and a current on/off ratio of 10<sup>4</sup>-10<sup>5</sup>. When illuminated by 363nm, 1.7 mW cm<sup>-2</sup> UV light, the IZO-FET displays a photocurrent of 2 mA, and a darkness current of ˜20 nA at an optimized gate voltage of -2 V. The device is effectively turned on in about 5 ms and off in 10 ms. These results suggest that the IZO-FET fabricated by inkjet printing could be a low cost highly sensitive UV photodetector.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F15</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Rayonnement UV</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Ultraviolet radiation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Radiación ultravioleta</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Transistor couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Thin film transistor</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Transistor capa delgada</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Transistor effet champ</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Field effect transistor</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Transistor efecto campo</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Addition indium</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Indium addition</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Adición indio</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Impression à jet d'encre</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Ink jet printing</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Impresión por chorro de tinta</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Courant photoélectrique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Photoelectric current</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Corriente fotoeléctrica</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Optimisation</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Optimization</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Optimización</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Tension de grille</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Gate voltage</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Voltaje de rejilla</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Diminution coût</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Cost lowering</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Reducción costes</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Détecteur UV</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Ultraviolet detector</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Detector UV</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>22</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Doped materials</s0><s5>22</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>23</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>23</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>23</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>24</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Indium oxide</s0><s5>24</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Indio óxido</s0><s5>24</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>0707D</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>82</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Photodétecteur</s0><s5>11</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>Photodetector</s0><s5>11</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Fotodetector</s0><s5>11</s5></fC07><fC07 i1="02" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0><s5>12</s5></fC07><fC07 i1="02" i2="X" l="ENG"><s0>Optoelectronic device</s0><s5>12</s5></fC07><fC07 i1="02" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0><s5>12</s5></fC07><fN21><s1>108</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000653 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd -nk 000653 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Chine
|étape= Analysis
|type= RBID
|clé= Pascal:11-0174558
|texte= Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique
}}
| This area was generated with Dilib version V0.5.77. |  |